Vertical split gate flash memory cell and method for fabricating the same

ABSTRACT

A vertical split gate flash memory cell. The memory cell includes a substrate, a floating gate, a control gate, a tunnel layer, a first doping region, and a second doping region. The floating gate is disposed in the lower trench and insulated from the adjacent substrate by a floating gate oxide layer. The control gate is disposed over the floating gate and insulated from the adjacent substrate by a control gate oxide layer. The tunnel oxide layer is disposed between the floating gate and the control gate for insulation of the floating gate and the control gate. The first doping region is formed in the substrate adjacent to the control gate and the second doping region is formed in the substrate below the first doping region and adjacent to the control gate to serve as source and drain regions with the first doping region.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates in general to a semiconductordevice and method for fabricating the same. More particularly, itrelates to a vertical split gate flash memory cell that increasesintegration with ICs.

[0003] 2. Description of the Related Art

[0004] Non-volatile memory, such as flash memory, stores data regardlessof electrical power supplied, and reads and writes data by controlling athreshold voltage of a control gate. Conventionally, flash memoryincludes a floating gate and a control gate. The floating gate storescharge and the control gate reads and writes data. In addition, thefloating gate is located under the control gate and is not connected toexternal circuit, and the control gate connects to the word line. One ofthe advantages of flash memory is its capacity for block-by-block memoryerasure. Furthermore, memory erasure is fast, and normally takes just 1to 2 seconds for the complete removal of a whole block of memory.Therefore, in recent years, it has been widely applied to consumerelectronics devices, such as digital cameras, mobile phones, personalstereos, and laptops.

[0005] There is much interest in reducing the size of individualsemiconductor devices to increase their density on an integrated circuit(IC) chip. This reduces size and power consumption of the chip, andallows faster operation. In order to achieve a memory cell with aminimum size, the gate length (line width) in a conventional transistormust be reduced to decrease the lateral dimension of the memory cell.However, the conventional process for fabricating flash memory usuallyuses photomasks to define the devices. Since the precision of thephotomasks is limited, misalignment usually occurs for devices with asmaller line width. This causes open circuits or short circuits, and theelectrical properties of the flash memory fail. Therefore, the devicesize of the conventional flash memory is limited by the design rule, soit is difficult to shrink the device size. In addition, short channeleffect and hot carrier effect occurs when the line width is shrink,thereby reducing the reliability of devices.

SUMMARY OF THE INVENTION

[0006] Accordingly, an object of the invention is to provide a novelvertical split gate flash memory cell to increase the integration of ICsby decreasing the lateral dimension of the memory cell.

[0007] Another object of the invention is to provide a novel method forfabricating a vertical split gate flash memory cell to prevent shortchannel effect, thereby increasing the reliability of devices.

[0008] According to one aspect, the invention provides a split gateflash memory cell. The memory cell includes a substrate, a floatinggate, a control gate, a tunnel layer, a first doping region, and asecond doping region. The floating gate is disposed in the lower trenchand insulated from the adjacent substrate by a floating gate oxidelayer. The control gate is disposed over the floating gate and insulatedfrom the adjacent substrate by a control gate oxide layer. The tunneloxide layer is disposed between the floating gate and the control gatefor insulation between the floating gate and the control gate. The firstdoping region is formed in the substrate adjacent to the control gateand the second doping region is formed in the substrate below the firstdoping region and adjacent to the control gate to serve as source anddrain regions with the first doping region. The memory cell furtherincludes an insulating layer, a conductive stud, and a gate structure.The insulating layer is disposed over the first doping region. Theconductive stud is disposed on the control gate and insulated from thefirst doping region by an insulating spacer. The gate structure isdisposed on the conductive stud to serve as a word line.

[0009] According to another aspect, the invention provides a method forfabricating a vertical split gate flash memory cell. First, a substratehaving a first trench and a second trench is provided. Next, aconformable floating gate oxide layer is formed over the sidewall andthe bottom of each lower trench. Next, a floating gate is formed overthe floating gate oxide layer in each of the lower trenches. Next, atunnel oxide layer is formed on the floating gate. Next, a conformablecontrol gate oxide layer is formed over the sidewall of each uppertrench. Next, a control gate is formed on the tunnel oxide layer. Next,ion implantation is performed in the substrate adjacent to the floatinggate to form a second doping region. Finally, ion implantation isperformed in the substrate adjacent to the control gate to form a firstdoping region. Moreover, after the control gate is formed, a conductivestud and an insulating spacer are formed on the control gate, whereinthe conductive stud is insulated from the first doping region by theinsulating spacer. Next, an insulating layer is formed over the firstdoping region. Next, parts of the conductive stud, the insulatingspacer, the control gate, the control gate oxide layer, the tunnel oxidelayer, the floating gate, and the floating gate oxide layer in the firsttrench are removed to form a third trench. Thereafter, an isolationstructure is formed in the third trench. Next, a plurality of gatestructures is formed over the insulating layer and the trenches.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The present invention can be more fully understood by reading thesubsequent detailed description in conjunction with the examples andreferences made to the accompanying drawings, wherein:

[0011]FIG. 1 is a plane view showing a vertical split gate flash memorycell according to the present invention.

[0012]FIG. 2 is a cross-section showing a vertical split gate flashmemory cell along A-A line in FIG. 1.

[0013] FIGS. 3-10 are cross-sections showing a method for fabricating avertical split gate flash memory cell according to the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

[0014]FIG. 1 shows a plane view of a vertical split gate flash memorycell having gate layer 222 and interconnect layer 230. FIG. 2 shows across-section of a vertical split gate flash memory cell along A-A linein FIG. 1. The memory cell includes a substrate 200, such as a p-typesilicon substrate, having a deep trench 207. A floating gate is disposedin the lower trench 207. The floating gate 204 can be polysilicon and isinsulated from the adjacent substrate 200 by a floating gate oxide layer202. A control gate 210 is disposed over the floating gate 204 in theupper trench 207. Also, the control gate 210 can be polysilicon and isinsulated from the adjacent substrate 200 by a control gate oxide layer208. A tunnel oxide layer 206 is disposed between the floating gate 204and the control gate 210 for insulation of the floating gate 204 and thecontrol gate 210. In this invention, the tunnel oxide layer 206 has athickness of about 100˜500 Å. Preferably, the tunnel oxide layer 206 hasa thickness of about 300 Å. A doping region 212, such as an n-typedoping region, is formed in the substrate 200 adjacent to the controlgate 210 and another doping region 214, such as an n-type doping region,is formed in the substrate 200 adjacent to the floating gate 204. Dopingregion 212, 214 serve as drain region and source drain of the flashmemory cell, respectively, thereby forming two vertical channels (notshown) in the substrate 200 at both sides of the trench 207. Aninsulating layer 216, such as a silicon oxide layer, is disposed overthe doping region 212 and has openings (not shown) to expose the dopingregion 212. A conductive stud 220 is disposed on the control gate 210and insulated from the doping region 212 by an insulating spacer 218. Inthis invention, the conductive stud 220 can be polysilicon and theinsulating spacer can be silicon nitride. A plurality of gate structures227 are respectively disposed on the insulating layer 216 and conductivestud 220, wherein the gate structure 227 disposed on the conductive stud220 serves as a word line of the flash memory cell. The gate structure227 includes a gate 222, a gate spacer 226, and a cap layer 224. Thegate spacer 226 and cap layer 224 can be silicon nitride. An insulatinglayer 228, such as borophosphsilicate glass (BPSG), is deposited overthe insulating layer 216 and gate structure 227. Interconnect layer 230is formed over the insulating layer 228 and filled in the openings ofthe insulating layer 216 to connect with the doping region 212. In theinvention, the interconnect layer 230 can be tungsten or polysilicon.

[0015] FIGS. 3-10 shows cross-sections of a method for fabricating avertical split gate flash memory cell according to the presentinvention. First, in FIG. 3, a substrate 200, such as p-type siliconsubstrate, is provided. A pad oxide layer 201 and a silicon nitridelayer 203 are successively deposited on the substrate 200. Subsequently,lithography and etching are performed on the silicon nitride layer 203and the pad oxide layer 201 to form openings (not shown) and expose thesubstrate 200. Next, the exposed substrate 200 under the openings isetched by anisotropic etching, such as dry etching, using the siliconnitride layer 203 as a mask to form a plurality trenches. In order tosimplify the diagram, only two trenches 205, 207 are shown.

[0016] In FIG. 4, conformable floating gate oxide layers 202 arerespectively formed over the sidewall and the bottom of the lowertrenches 205, 207 by thermal oxidation or other conventional deposition.Thereafter, floating gates 204 are respectively formed over the floatinggate oxide layers 202 in the low trenches 205, 207. In this invention, apolysilicon layer (not shown) is deposited on the silicon nitride layer203 and filled in the trenches 205, 207. Next, the polysilicon layer isetched back to leave part of a polysilicon layer in each of the trenches205, 207, to serve as floating gates. The height of the floating gateoxide layer is substantially equal to the remained polysilicon layer204.

[0017] Next, a conformable silicon oxide layer (not shown) is formedover the silicon nitride 203 and the surface of the trenches 205, 207 byconventional deposition, such as chemical vapor deposition (CVD).Subsequently, the silicon oxide layer over the silicon nitride 203 andthe sidewall of the trenches 205, 207 is removed to leave a siliconoxide layer 206 on the floating gate 204. The remaining silicon oxidelayer 206 serves as a tunnel oxide layer, which has a thickness of about100˜500 Å.

[0018] Also, conformable control gate oxide layers 208 are formed overthe sidewall of the upper trenches 205, 207 by thermal oxidation orother conventional deposition. Thereafter, a control gate 210, such aspolysilicon, is formed on the tunnel oxide 206. As shown in FIG. 4, theheight of the control gate 210 is substantially equal to the controlgate oxide layer 208 and both are lower than the top surface of thesubstrate 200.

[0019] Next, in FIG. 5, after the control gate 210 is formed, aconductive stud 220 and an insulating-spacer 218 are formed on thecontrol gate 210. In this invention, the conductive stud can bepolysilicon and the insulating spacer 218 can be silicon nitride.

[0020] Next, in FIG. 6, parts of the conductive stud 220, the insulatingspacer 218, the control gate 210, the control gate oxide layer 208, thetunnel oxide layer 206, the floating gate 204, and the floating gateoxide layer 202 in the trench 205 are removed by lithography and etchingto form a trench 211. Thereafter, silicon oxide (not shown) is filled inthe trench 211 by CVD, such as high-density plasma CVD (HDPCVD), to forman isolation structure 213.

[0021] Next, in FIG. 7, after the silicon nitride layer 203 is removed,ion implantation is performed in the substrate 200 adjacent to thefloating gate 204 to form a doping region 214, such as an n-type dopingregion. Subsequently, ion implantation is performed again in thesubstrate 200 adjacent to the control gate 210 to form a doping region212, such as an n-type doping region. These n-type doping region 212,214 serve as drain region and source region of the vertical split gateflash memory cell of the invention. In addition, the conductive stud 220is insulated from the n-type doping region 212 by the insulating spacer218. Next, an insulating layer 216, such as a silicon oxide layer, isdeposited on the n-type doping region 212 by conventional deposition,such as CVD, to make its height substantially level with the conductivestud 220 and insulating spacer 218.

[0022] Next, in FIG. 8, a plurality of gate structures 227 are formedover the insulating layer 216 and the trenches 205, 207. Each gatestructure 227 includes a gate 222, a gate spacer 226, and a cap layer224, wherein the gate spacer 226 and the cap layer 224 can be siliconnitride.

[0023] Next, in FIG. 9, an insulating layer 228, such as BPSG, isdeposited over the insulating layer 216 and gate structures 227.Finally, FIG. 10 shows a cross-section along B-B line in FIG. 1, inwhich the insulating layer 228 is patterned by lithography and etchingto expose part of doping region 212 in the substrate 200. Next, aninterconnect layer 230 is formed over the gate structures 227 andconnected with the exposed doping region 212. In this invention, theinterconnect layer 230 can be tungsten or polysilicon.

[0024] Since the channel of the vertical split gate flash memory cellaccording to the invention is vertical, the integration of ICs can beeffectively increased due to decreased lateral dimension of the memorycell compared with the prior art. Moreover, in the invention, thechannel length is not based on the line width, but based on the depth ofthe trench. That is, the short channel effect or hot carrier effect asmentioned in the prior art cannot occur even when line width is shrunk.Therefore, the reliability of the devices can be increased.

[0025] The foregoing description has been presented for purposes ofillustration and description. Obvious modifications or variations arepossible in light of the above teaching. The embodiments were chosen anddescribed to provide the best illustration of the principles of thisinvention and its practical application to thereby enable those skilledin the art to utilize the invention in various embodiments and withvarious modifications as are suited to the particular use contemplated.All such modifications and variations are within the scope of thepresent invention as determined by the appended claims when interpretedin accordance with the breadth to which they are fairly, legally, andequitably entitled.

What is claimed is:
 1. A vertical split gate flash memory cell,comprising: a substrate having a trench; a floating gate disposed in thelower trench and insulated from the adjacent substrate by a floatinggate oxide layer; a control gate disposed over the floating gate andinsulated from the adjacent substrate by a control gate oxide layer; atunnel oxide layer disposed between the floating gate and the controlgate for insulation between the floating gate and the control gate; afirst doping region formed in the substrate adjacent to the controlgate; and a second doping region formed in the substrate below the firstdoping region and adjacent to the control gate to serve as source anddrain regions with the first doping region.
 2. The memory cell asclaimed in claim 1, further comprising: an insulating layer disposedover the first doping region; a conductive stud disposed on the controlgate and insulated from the first doping region by an insulating spacer;and a gate structure disposed on the conductive stud to serve as a wordline.
 3. The memory cell as claimed in claim 2, wherein the insulatinglayer is silicon oxide.
 4. The memory cell as claimed in claim 2,wherein the conductive stud is polysilicon.
 5. The memory cell asclaimed in claim 2, wherein the insulating spacer is silicon nitride. 6.The memory cell as claimed in claim 2, wherein the gate structureincludes a gate, a gate spacer, and a cap layer.
 7. The memory cell asclaimed in claim 6, wherein the gate spacer and the cap layer aresilicon nitride.
 8. The memory cell as claimed in claim 1, wherein thesubstrate is a p-type silicon substrate.
 9. The memory cell as claimedin claim 1, wherein the first and second doping regions are n-typedoping regions.
 10. The memory cell as claimed in claim 1, wherein thefloating gate is polysilicon.
 11. The memory cell as claimed in claim 1,wherein the control gate is polysilicon.
 12. The memory cell as claimedin claim 1, wherein the tunnel oxide layer has a thickness of about100˜500 Å.
 13. A method for fabricating a vertical split gate flashmemory cell, comprising: providing a substrate having a first trench anda second trench; forming a conformable floating gate oxide layer overthe sidewall and the bottom of each lower trench; forming a floatinggate over the floating gate oxide layer in each of the lower trenches;forming a tunnel oxide layer on the floating gate; forming a conformablecontrol gate oxide layer over the sidewall of each upper trench; forminga control gate on the tunnel oxide layer; performing ion implantation inthe substrate adjacent to the floating gate to form a second dopingregion; and performing ion implantation in the substrate adjacent to thecontrol gate to form a first doping region.
 14. The method as claimed inclaim 13, wherein, after forming the control gate, further: forming aconductive stud and an insulating spacer on the control gate, whereinthe conductive stud is insulated from the first doping region by theinsulating spacer; forming an insulating layer over the first dopingregion; removing part of the conductive stud, the insulating spacer, thecontrol gate, the control gate oxide layer, the tunnel oxide layer, thefloating gate, and the floating gate oxide layer in the first trench toform a third trench; forming an isolation structure in the third trench;and forming a plurality of gate structures over the insulating layer andthe trenches.
 15. The method as claimed in claim 14, wherein theconductive stud is polysilicon.
 16. The method as claimed in claim 14,wherein the insulating spacer is silicon nitride.
 17. The memory cell asclaimed in claim 14, wherein the insulating layer is silicon oxide. 18.The method as claimed in claim 14, wherein the isolation structure ishigh-density plasma oxide.
 19. The method as claimed in claim 14,wherein each of the gate structures includes a gate, a gate spacer, anda cap layer.
 20. The method as claimed in claim 19, wherein the gatespacer and the cap layer are silicon nitride.
 21. The method as claimedin claim 13, wherein the substrate is a p-type silicon substrate. 22.The method as claimed in claim 21, wherein the first and second dopingregions are n-type doping regions.
 23. The method as claimed in claim13, wherein the floating gate is polysilicon.
 24. The method as claimedin claim 13, wherein the control gate is polysilicon.
 25. The method asclaimed in claim 13, wherein the tunnel oxide layer has a thickness ofabout 100˜500 Å.
 26. The method as claimed in claim 13, wherein theheight of the floating gate oxide layer is substantially equal to thefloating gate.
 27. The method as claimed in claim 13, wherein the heightof the control gate oxide layer is substantially equal to the controlgate.